1 variable capacitance diodes MA2SV01 silicon epitaxial planar type for vco features ? good linearity and large capacitance-ratio in c d ? v r relation ? small series resistance r d ? ss-mini type package, allowing downsizing of equipment and automatic insertion through the taping package absolute maximum ratings t a = 25 c unit : mm parameter symbol rating unit reverse voltage (dc) v r 6v junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit reverse current (dc) i r v r = 6 v 10 na diode capacitance c d(1v) v r = 1 v, f = 1 mhz 15.0 17.0 pf c d(3v) v r = 3 v, f = 1 mhz 5.0 7.0 pf capacitance ratio c d(1v) /c d(3v) 2.2 ? series resistance * r d c d = 9 pf, f = 470 mhz 1.0 ? electrical characteristics t a = 25 c note) 1 } rated input/output frequency: 470 mhz y 2 } *: r f measuring instrument: yhp model 4191a rf impedance analyzer marking symbol: u 1 : anode 2 : cathode ss-mini type package (2-pin) 1.7 0.1 0.8 0.1 0.7 0.1 0 to 0.1 0.27 + 0.05 ? 0.02 0.27 + 0.05 ? 0.02 1.3 0.1 0.15 min. 0.15 min. 0.13 + 0.05 ? 0.02
variable capacitance diodes 2 MA2SV01 i f ? v f c d ? t a i r ? t a c d ? v r 0 120 100 80 60 40 20 0 0.2 0.4 0.6 0.8 1.0 1.2 forward voltage v f ( v ) forward current i f ( ma ) t a = 60 c 25 c ? 40 c 0.01 0 40 80 120 160 20 60 100 140 0.1 1 10 100 ambient temperature t a ( c) reverse current i r ( na ) v r = 6 v 1 100 10 2 20 3 30 5 50 0 8 16 24 32 4 1220283640 reverse voltage v r ( v ) diode capacitance c d ( pf ) f = 1 mhz t a = 25 c 0.98 0 20 40 60 80 100 0.99 1.00 1.01 1.02 1.03 1.04 ambient temperature t a ( c ) c d ( t a = 25 c ) c d ( t a ) v r = 1 v 3 v f = 1 mhz
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